| PART |
Description |
Maker |
| MMDT2227 |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| BC847S |
Multi-chip transistor (NPN)
|
Shenzhen Jin Yu Semiconductor Co., Ltd.
|
| UMH15N |
NPN Multi-Chip Built-in Resistors Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| MP2B5038 MP2B5085 MP2B5052 MP2B5150 |
A multi chip power device for a Multi-Oscillated Current Resonant type Converter
|
Fuji Electric
|
| TPCP8H02 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| SP506 |
Multi-Protocol Serial Transceivers
5V / Single Chip WAN Multi-Mode Serial Transceiver
|
Sipex
|
| M36L0T7050B2 M36L0T7050B2ZAQ M36L0T7050B2ZAQE M36L |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
Numonyx B.V
|
| S75WS256NDFBFWLJ3 S75WS256NDFBAWLK2 S75WS256NDFBFW |
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion, Inc.
SPANSION LLC
|
| CE201210-2N2D CE201210-1N8D CE201210-1N5D CE201210 |
Multi-Layer Chip Inductors
MAGNETICS MULTILAYER CHIP INDUCTOR
|
Bourns Electronic Solutions
Bourns, Inc.
|
| M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMicroelectronics
|
